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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * * Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 1 3 4 Characterized with S-Parameters 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data PD Total Device Dissipation @ TA = 25C Derate above 25C 300 1.71 mWatts mW/ C MSC1305.PDF 10-25-99 2N5179 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol VCEO(sus) BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 Adc, IE=0) Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 12 20 2.5 Value Typ. Max. .02 Unit Vdc Vdc Vdc A (on) HFE VBE(sat) VCE(sat) DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) 25 250 1.0 0.4 Vdc Vdc DYNAMIC Symbol fT CCB Test Conditions Min. Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) Collector-base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 900 Value Typ. 1500 Max. 1.0 Unit MHz pF MSC1305.PDF 10-25-99 2N5179 FUNCTIONAL Symbol NF GPE Test Conditions Min. Noise Figure (figure 1) Common-Emitter Amplifier Power Gain (figure 1) IC = 1.5 mAdc, VCE = 6.0 Vdc, f = 200 MHz IC = 1.5 mAdc, VCE = 6.0 Vdc, f = 200 MHz 20 Value Typ. Max. 4.5 Unit dB dB PIN (RS=50 OHMS) POUT (RL=50 OHMS) Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications. MSC1305.PDF 10-25-99 2N5179 FUNCTIONAL (CONT) Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz Value Typ. 17 18 12 Max. Unit dB dB dB G U max - MAG 2 |S21| Note: 1. Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 5 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .471 .314 .230 .171 .168 .149 .137 .119 .153 .171 -90 -145 156 108 54 -9 -72 -129 -174 122 S21 |S21| 6.78 4.20 2.76 2.17 1.86 1.53 1.31 1.18 1.13 .979 122 100 91 86 79 71 67 64 58 49 S12 |S12| .023 .034 .043 .056 .062 .069 .073 .092 .101 .106 64 58 65 63 62 66 71 74 68 71 S22 |S22| .844 .780 .768 .756 .741 .740 .739 .744 .742 .749 -51 -93 -134 -177 140 98 54 8 -38 -82 MSC1305.PDF 10-25-99 2N5179 MSC1305.PDF 10-25-99 |
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